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A fully integrated field emission diode (FED) using §carbon nanotubes as electron field emitter was §constructed. The device was designed and fabricated §on a glass substrate by screen-printing thick film§technique. The FED was operated at 100 V for giving §a forward current density of 180 mA/cm2. A leakage §current of 1 pA was measured then a 1000 V reverse §voltage was applied, indicating that a high voltage §blocking capability was obtained from such a device. §From theoretical calculation and experimental §results, the FED can be operated in megahertz due to §very high speed of electrons traveling through them §vacuum gap on forward operation and a small residue §capacitance as well as minimum the reverse recovery §time on reverse operation. The high performance of §the novel FED was fabricated by a cost effective §process combined with nanomaterials which opens up a §route to produce miniaturized vacuum devices and new §applications for such kind of the integrated vacuum §microelectronic device.
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