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Current Collection at Grain Boundaries of mc Silicon Solar Cells
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Grain boundaries exert significant influence on theelectrical and optical properties of mc-siliconsolar cells. Grain boundaries tend to have a highconcentration of lattice defects and impuritieswhich due to high recombination for minoritycarriers. The usual way of countering these effectsis to passivate the grain boundaries with hydrogenatoms.In this work another method has been investigated:The front metal grid of the solar cellhas been designed such that it mainly follows thegrain boundaries.Theoretically, this entails some beneficial effects:- The shading due to the metal lines is over areasof short lifetime, thereby exposing more longlifetime area to sun light. This should increase theshort circuit current.- The metal lines can be thicker, which reduces theseries resistance.- Grain boundaries are regions of stronger n-doping.Placing the metal lines there reduces the contactresistance between the metal and the semiconductor.- The electrons in the n-doped emitter drifting tothe metal lines do not have to cross the potentialbarriers at the grain boundaries. This, too, reducesthe series resistance.
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