Contacto
Cómo comprar
Entrega
Guía de compras
Gate Stack and Silicide Issues in Silicon Processing: Volume 611
Inglés
95 b
Hasta 30 días para devoluciones
Clientes que también han comprado
/
Tapa blanda
37.49
€
/
Tapa blanda
28.39
€
/
Tapa blanda
45.29
€
As the feature size of microelectronic devices approaches the deep submicron regime, the process development and integration issues related to gate stack and silicide processing are key challenges. Gate leakage is rising due to direct tunneling. Power and reliability concerns are expected to limit the ultimate scaling of SiO2-based insulators to about 1.5nm. Gate insulators must not deleteriously affect the interface quality, thermal stability, charge trapping, or process integration. Metal gate materials and damascene gates are being investigated, in conjunction with the application of a high-permittivity gate insulator, to provide sufficient device performance at ULSI dimensions. The silicidation process is also coming under pressure. Narrow device widths and decreasing junction depths are making the formation of low-leakage, low-resistance silicide straps extremely difficult. Producing shallower junctions via ion implantation is inhibited by transient enhanced diffusion and low beam currents at low implantation energies. Gate stack and contact film effects, such as point defect injection, extended defect formation, and stress on ultrashallow junction formation must be considered.
Sobre el libro
Inglés
Regale este libro hoy
Es fácil
1 Añadir al carrito y elegir Entregar como regalo en el checkout 2 Le enviaremos un vale 3 El libro llegará a la dirección del destinatarioTambién puede interesarle
/
Tapa blanda
20.79
€
/
Tapa blanda
20.09
€
/
Tapa dura
70.59
€
/
Tapa dura
52.39
€
/
Tapa blanda
9.99
€
¡Hola! Soy Libroamiko, tu asesor de libros.
¿Cómo puedo ayudarte?